Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN
Identifieur interne : 00A497 ( Main/Repository ); précédent : 00A496; suivant : 00A498Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN
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Abstract
Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as (5.0±0.5)×107 cm/s can be achieved at T=300 K. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm. © 2004 American Institute of Physics.
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Liang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Tsen, K T" uniqKey="Tsen K">K. T. 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Our experimental results show that an electron drift velocity as high as (5.0±0.5)×10<sup>7</sup> cm/s can be achieved at T=300 K. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN</s1></fA08><fA11 i1="01" i2="1"><s1>LIANG (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>TSEN (K. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>FERRY (D. 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